ZXM64N035GTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM64N035GTA
Código: ZXM64N035
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 Vtrⓘ - Tiempo de subida: 4.6 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de MOSFET ZXM64N035GTA
ZXM64N035GTA Datasheet (PDF)
zxm64n035gta.pdf
ZXM64N035G 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.050 ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r
zxm64n035l3.pdf
ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r
zxm64n03xtc.pdf
ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance
zxm64n03xta.pdf
ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance
Otros transistores... ZXM62N02E6TA , ZXM62N03E6TA , ZXM62N03GTA , ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA , ZXM64N02XTA , ZXM64N02XTC , IRFB4227 , ZXM64N03XTA , ZXM64N03XTC , ZXM64P02XTA , ZXM64P02XTC , ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA , ZXM66N03N8TA .
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