ZXM64N035GTA - аналоги и даташиты транзистора

 

ZXM64N035GTA - Даташиты. Аналоги. Основные параметры


   Наименование производителя: ZXM64N035GTA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4.6 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
   Тип корпуса: SOT-223

 Аналог (замена) для ZXM64N035GTA

 

ZXM64N035GTA Datasheet (PDF)

 ..1. Size:100K  zetex
 zxm64n035gta.pdf pdf_icon

ZXM64N035GTA

ZXM64N035G 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.050 ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

 5.1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N035GTA

ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

 6.1. Size:331K  zetex
 zxm64n03xtc.pdf pdf_icon

ZXM64N035GTA

ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance

 6.2. Size:331K  zetex
 zxm64n03xta.pdf pdf_icon

ZXM64N035GTA

ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance

ПОКАЗАТЬ ЕЩЁ

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