ZXM64N035GTA datasheet, аналоги, основные параметры

Наименование производителя: ZXM64N035GTA  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 35 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4.6 ns

Cossⓘ - Выходная емкость: 200 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm

Тип корпуса: SOT-223

  📄📄 Копировать 

Аналог (замена) для ZXM64N035GTA

- подборⓘ MOSFET транзистора по параметрам

 

ZXM64N035GTA даташит

 ..1. Size:100K  zetex
 zxm64n035gta.pdf pdf_icon

ZXM64N035GTA

ZXM64N035G 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.050 ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

 5.1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N035GTA

ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

 6.1. Size:331K  zetex
 zxm64n03xtc.pdf pdf_icon

ZXM64N035GTA

ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance

 6.2. Size:331K  zetex
 zxm64n03xta.pdf pdf_icon

ZXM64N035GTA

ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... ZXM62N02E6TA, ZXM62N03E6TA, ZXM62N03GTA, ZXM62P02E6TA, ZXM62P03E6TA, ZXM62P03GTA, ZXM64N02XTA, ZXM64N02XTC, IRFB4227, ZXM64N03XTA, ZXM64N03XTC, ZXM64P02XTA, ZXM64P02XTC, ZXM64P035GTA, ZXM64P03XTA, ZXM66N02N8TA, ZXM66N03N8TA