ZXM64N03XTC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM64N03XTC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: MSOP8

  📄📄 Copiar 

 Búsqueda de reemplazo de ZXM64N03XTC MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXM64N03XTC datasheet

 ..1. Size:331K  zetex
 zxm64n03xtc.pdf pdf_icon

ZXM64N03XTC

ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance

 4.1. Size:331K  zetex
 zxm64n03xta.pdf pdf_icon

ZXM64N03XTC

ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance

 6.1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N03XTC

ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

 6.2. Size:100K  zetex
 zxm64n035gta.pdf pdf_icon

ZXM64N03XTC

ZXM64N035G 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.050 ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

MOSTRAR MÁS

Otros transistores... ZXM62N03GTA, ZXM62P02E6TA, ZXM62P03E6TA, ZXM62P03GTA, ZXM64N02XTA, ZXM64N02XTC, ZXM64N035GTA, ZXM64N03XTA, 10N60, ZXM64P02XTA, ZXM64P02XTC, ZXM64P035GTA, ZXM64P03XTA, ZXM66N02N8TA, ZXM66N03N8TA, ZXM66P02N8TA, ZXM66P02N8TC