ZXM64N03XTC - Даташиты. Аналоги. Основные параметры
Наименование производителя: ZXM64N03XTC
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.5 ns
Cossⓘ - Выходная емкость: 200 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: MSOP8
Аналог (замена) для ZXM64N03XTC
ZXM64N03XTC Datasheet (PDF)
zxm64n03xtc.pdf
ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance
zxm64n03xta.pdf
ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance
zxm64n035l3.pdf
ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r
zxm64n035gta.pdf
ZXM64N035G 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.050 ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r
Другие MOSFET... ZXM62N03GTA , ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA , ZXM64N02XTA , ZXM64N02XTC , ZXM64N035GTA , ZXM64N03XTA , 10N60 , ZXM64P02XTA , ZXM64P02XTC , ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA , ZXM66N03N8TA , ZXM66P02N8TA , ZXM66P02N8TC .
History: ZXM66N03N8TA | IXFT52N50P2
History: ZXM66N03N8TA | IXFT52N50P2
Список транзисторов
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