IRFR310A Todos los transistores

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 2.815 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

PD - 95028A IRFR310PbF IRFU310PbF Lead-Free 12/10/04 Document Number 91272 www.vishay.com 1 IRFR/U310PbF Document Number 91272 www.vishay.com 2 IRFR/U310PbF Document Number 91272 www.vishay.com 3 IRFR/U310PbF Document Number 91272 www.vishay.com 4 IRFR/U310PbF Document Number 91272 www.vishay.com 5 IRFR/U310PbF Document Number 91272 www.vishay.com 6 IRFR/U3

IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310) Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast Switching Qgd (nC) 6.5 Ful

IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* Surface Mount (IRFR310/SiHFR310) Qg (Max.) (nC) 12 COMPLIANT Straight Lead (IRFU310/SiHFU310) Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5 Configuration S

IRFR310P www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS d

IRFR310T www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS d

iscN-Channel MOSFET Transistor IRFR310 FEATURES Low drain-source on-resistance RDS(ON) 3.6 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER