Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 2.815 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

PD - 95028AIRFR310PbFIRFU310PbF Lead-Free12/10/04Document Number: 91272 www.vishay.com1IRFR/U310PbFDocument Number: 91272 www.vishay.com2IRFR/U310PbFDocument Number: 91272 www.vishay.com3IRFR/U310PbFDocument Number: 91272 www.vishay.com4IRFR/U310PbFDocument Number: 91272 www.vishay.com5IRFR/U310PbFDocument Number: 91272 www.vishay.com6IRFR/U3

IRFR310, IRFU310, SiHFR310, SiHFU310www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310)Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast SwitchingQgd (nC) 6.5 Ful

IRFR310, IRFU310, SiHFR310, SiHFU310Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* Surface Mount (IRFR310/SiHFR310)Qg (Max.) (nC) 12COMPLIANT Straight Lead (IRFU310/SiHFU310)Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5Configuration S

IRFR310Pwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

IRFR310Twww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

iscN-Channel MOSFET Transistor IRFR310FEATURESLow drain-source on-resistance:RDS(ON) 3.6 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER