ZXM64P02XTA Todos los transistores

 

ZXM64P02XTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXM64P02XTA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12.3 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: MSOP8
 

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ZXM64P02XTA Datasheet (PDF)

 ..1. Size:181K  zetex
 zxm64p02xta.pdf pdf_icon

ZXM64P02XTA

ZXM64P02X20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.090 ; I = -3.5A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on

 4.1. Size:181K  zetex
 zxm64p02xtc.pdf pdf_icon

ZXM64P02XTA

ZXM64P02X20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.090 ; I = -3.5A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on

 5.1. Size:328K  diodes
 zxm64p02x.pdf pdf_icon

ZXM64P02XTA

ZXM64P02X20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.090 ; I = -3.5A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on

 7.1. Size:106K  diodes
 zxm64p035l3.pdf pdf_icon

ZXM64P02XTA

ZXM64P035L335V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on

MOSTRAR MÁS

Otros transistores... ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA , ZXM64N02XTA , ZXM64N02XTC , ZXM64N035GTA , ZXM64N03XTA , ZXM64N03XTC , IRFB4110 , ZXM64P02XTC , ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA , ZXM66N03N8TA , ZXM66P02N8TA , ZXM66P02N8TC , ZXM66P03N8TA .

History: ZXMN0545G4TA | ZXM66N02N8TA | ZXM66P02N8TA | ZXM66P02N8TC

 

 
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