ZXM64P02XTA datasheet, аналоги, основные параметры

Наименование производителя: ZXM64P02XTA  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12.3 ns

Cossⓘ - Выходная емкость: 350 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm

Тип корпуса: MSOP8

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Аналог (замена) для ZXM64P02XTA

- подборⓘ MOSFET транзистора по параметрам

 

ZXM64P02XTA даташит

 ..1. Size:181K  zetex
 zxm64p02xta.pdf pdf_icon

ZXM64P02XTA

ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.090 ; I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on

 4.1. Size:181K  zetex
 zxm64p02xtc.pdf pdf_icon

ZXM64P02XTA

ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.090 ; I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on

 5.1. Size:328K  diodes
 zxm64p02x.pdf pdf_icon

ZXM64P02XTA

ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.090 ; I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on

 7.1. Size:106K  diodes
 zxm64p035l3.pdf pdf_icon

ZXM64P02XTA

ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V RDS(on) = 0.075 ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on

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