Справочник MOSFET. ZXM64P02XTA

 

ZXM64P02XTA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXM64P02XTA
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12.3 ns
   Cossⓘ - Выходная емкость: 350 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: MSOP8
 

 Аналог (замена) для ZXM64P02XTA

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXM64P02XTA Datasheet (PDF)

 ..1. Size:181K  zetex
 zxm64p02xta.pdf pdf_icon

ZXM64P02XTA

ZXM64P02X20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.090 ; I = -3.5A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on

 4.1. Size:181K  zetex
 zxm64p02xtc.pdf pdf_icon

ZXM64P02XTA

ZXM64P02X20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.090 ; I = -3.5A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on

 5.1. Size:328K  diodes
 zxm64p02x.pdf pdf_icon

ZXM64P02XTA

ZXM64P02X20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.090 ; I = -3.5A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on

 7.1. Size:106K  diodes
 zxm64p035l3.pdf pdf_icon

ZXM64P02XTA

ZXM64P035L335V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA , ZXM64N02XTA , ZXM64N02XTC , ZXM64N035GTA , ZXM64N03XTA , ZXM64N03XTC , IRFB4110 , ZXM64P02XTC , ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA , ZXM66N03N8TA , ZXM66P02N8TA , ZXM66P02N8TC , ZXM66P03N8TA .

History: SIHB10N40D | 4N65KG-TA3-T

 

 
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