ZXM66P02N8TC Todos los transistores

 

ZXM66P02N8TC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXM66P02N8TC
   Código: ZXM66P02
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.7 V
   Qgⓘ - Carga de la puerta: 43.3 nC
   trⓘ - Tiempo de subida: 44.3 nS
   Cossⓘ - Capacitancia de salida: 1038 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SO-8

 Búsqueda de reemplazo de MOSFET ZXM66P02N8TC

 

ZXM66P02N8TC Datasheet (PDF)

 ..1. Size:610K  diodes
zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf

ZXM66P02N8TC
ZXM66P02N8TC

A Product Line ofDiodes IncorporatedZXM66P02N820V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti

 7.1. Size:65K  diodes
zxm66p03n8.pdf

ZXM66P02N8TC
ZXM66P02N8TC

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

 7.2. Size:64K  zetex
zxm66p03n8ta.pdf

ZXM66P02N8TC
ZXM66P02N8TC

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

 7.3. Size:831K  cn vbsemi
zxm66p03n8ta.pdf

ZXM66P02N8TC
ZXM66P02N8TC

ZXM66P03N8TAwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


ZXM66P02N8TC
  ZXM66P02N8TC
  ZXM66P02N8TC
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F

 

 

 
Back to Top