ZXM66P02N8TC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM66P02N8TC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 44.3 nS

Cossⓘ - Capacitancia de salida: 1038 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SO-8

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ZXM66P02N8TC datasheet

 ..1. Size:610K  diodes
 zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf pdf_icon

ZXM66P02N8TC

A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti

 7.1. Size:65K  diodes
 zxm66p03n8.pdf pdf_icon

ZXM66P02N8TC

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc

 7.2. Size:64K  zetex
 zxm66p03n8ta.pdf pdf_icon

ZXM66P02N8TC

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc

 7.3. Size:831K  cn vbsemi
 zxm66p03n8ta.pdf pdf_icon

ZXM66P02N8TC

ZXM66P03N8TA www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6

MOSTRAR MÁS

Otros transistores... ZXM64N03XTC, ZXM64P02XTA, ZXM64P02XTC, ZXM64P035GTA, ZXM64P03XTA, ZXM66N02N8TA, ZXM66N03N8TA, ZXM66P02N8TA, IRF630, ZXM66P03N8TA, ZXMD63C02X, ZXMN0545G4TA, ZXMN10A07FTA, ZXMN10A07FTC, ZXMN10A07ZTA, ZXMN10A08E6TA, ZXMN10A08E6TC