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ZXM66P02N8TC Spec and Replacement


   Type Designator: ZXM66P02N8TC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44.3 nS
   Cossⓘ - Output Capacitance: 1038 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO-8

 ZXM66P02N8TC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXM66P02N8TC Specs

 ..1. Size:610K  diodes
 zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf pdf_icon

ZXM66P02N8TC

A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti... See More ⇒

 7.1. Size:65K  diodes
 zxm66p03n8.pdf pdf_icon

ZXM66P02N8TC

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

 7.2. Size:64K  zetex
 zxm66p03n8ta.pdf pdf_icon

ZXM66P02N8TC

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

 7.3. Size:831K  cn vbsemi
 zxm66p03n8ta.pdf pdf_icon

ZXM66P02N8TC

ZXM66P03N8TA www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6... See More ⇒

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Detailed specifications: ZXM64N03XTC , ZXM64P02XTA , ZXM64P02XTC , ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA , ZXM66N03N8TA , ZXM66P02N8TA , IRF630 , ZXM66P03N8TA , ZXMD63C02X , ZXMN0545G4TA , ZXMN10A07FTA , ZXMN10A07FTC , ZXMN10A07ZTA , ZXMN10A08E6TA , ZXMN10A08E6TC .

History: ZXM66P03N8TA

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