ZXMD63C02X Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMD63C02X  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.87 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.1 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: MSOP8

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ZXMD63C02X datasheet

 ..1. Size:322K  diodes
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ZXMD63C02X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien

 ..2. Size:204K  zetex
zxmd63c02x.pdf pdf_icon

ZXMD63C02X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien

 6.1. Size:378K  diodes
zxmd63c03x.pdf pdf_icon

ZXMD63C02X

ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low volt

 8.1. Size:332K  diodes
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ZXMD63C02X

ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-res

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