ZXMD63C02X Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMD63C02X 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.87 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.1 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: MSOP8
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ZXMD63C02X datasheet
zxmd63c02x.pdf
ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien
zxmd63c02x.pdf
ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien
zxmd63c03x.pdf
ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low volt
zxmd63n03x.pdf
ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-res
Otros transistores... ZXM64P02XTC, ZXM64P035GTA, ZXM64P03XTA, ZXM66N02N8TA, ZXM66N03N8TA, ZXM66P02N8TA, ZXM66P02N8TC, ZXM66P03N8TA, AON7408, ZXMN0545G4TA, ZXMN10A07FTA, ZXMN10A07FTC, ZXMN10A07ZTA, ZXMN10A08E6TA, ZXMN10A08E6TC, ZXMN10A09KTC, ZXMN10A11GTA
History: ZXMN3B14FTA | ZXM64P02XTC | ZXM64P03XTA
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