ZXMD63C02X MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMD63C02X
Маркировка: ZXM63C02
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 0.87 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.7 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 8.1 ns
Cossⓘ - Выходная емкость: 120 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: MSOP8
Аналог (замена) для ZXMD63C02X
ZXMD63C02X Datasheet (PDF)
zxmd63c02x.pdf
ZXMD63C02X20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V =20V; R =0.13 ; I =2.4A(BR)DSS DS(ON) DP-CHANNEL: V =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficien
zxmd63c02x.pdf
ZXMD63C02X20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V =20V; R =0.13 ; I =2.4A(BR)DSS DS(ON) DP-CHANNEL: V =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficien
zxmd63c03x.pdf
ZXMD63C03X30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3AP-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low volt
zxmd63n03x.pdf
ZXMD63N03XDUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-res
zxmd63n02x.pdf
ZXMD63N02XDUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.13; I =2.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Lo
zxmd63p02x.pdf
ZXMD63P02XDUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Lo
zxmd63p03x.pdf
ZXMD63P03XDUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-r
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F