ZXMD63C02X datasheet, аналоги, основные параметры

Наименование производителя: ZXMD63C02X  📄📄 

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.87 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.1 ns

Cossⓘ - Выходная емкость: 120 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm

Тип корпуса: MSOP8

  📄📄 Копировать 

Аналог (замена) для ZXMD63C02X

- подборⓘ MOSFET транзистора по параметрам

 

ZXMD63C02X даташит

 ..1. Size:322K  diodes
 zxmd63c02x.pdf pdf_icon

ZXMD63C02X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien

 ..2. Size:204K  zetex
 zxmd63c02x.pdf pdf_icon

ZXMD63C02X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien

 6.1. Size:378K  diodes
 zxmd63c03x.pdf pdf_icon

ZXMD63C02X

ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low volt

 8.1. Size:332K  diodes
 zxmd63n03x.pdf pdf_icon

ZXMD63C02X

ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-res

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... ZXM64P02XTC, ZXM64P035GTA, ZXM64P03XTA, ZXM66N02N8TA, ZXM66N03N8TA, ZXM66P02N8TA, ZXM66P02N8TC, ZXM66P03N8TA, AON7408, ZXMN0545G4TA, ZXMN10A07FTA, ZXMN10A07FTC, ZXMN10A07ZTA, ZXMN10A08E6TA, ZXMN10A08E6TC, ZXMN10A09KTC, ZXMN10A11GTA