ZXMN10A08E6TA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMN10A08E6TA
   Código: 10A8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 2.2 nS
   Cossⓘ - Capacitancia de salida: 28.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: SOT-26

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ZXMN10A08E6TA Datasheet (PDF)

..1. Size:174K diodes
zxmn10a08e6ta zxmn10a08e6tc.pdf

A Product Line ofDiodes Incorporated ZXMN10A08E6100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t

3.1. Size:234K diodes
zxmn10a08e6.pdf

A Product Line ofDiodes IncorporatedZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9AMechanical Data Case: SOT23-6

5.1. Size:179K diodes
zxmn10a08dn8.pdf

ZXMN10A08DN8100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistanc

5.2. Size:441K diodes
zxmn10a08g.pdf

ZXMN10A08G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.91000.300 @ VGS= 6V 2.6DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementGapplications.FeaturesS Low on-r

5.3. Size:1582K kexin
zxmn10a08g.pdf

SMD Type MOSFETN-Channel MOSFETZXMN10A08G (KXMN10A08G)Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 100V ID = 2.9 A (VGS = 10V) RDS(ON) 250m (VGS = 10V)1 2 3D RDS(ON) 300m (VGS = 6V)0.2502.30 (typ)Gauge Plane1.GateG 2.Drain0.700.13.SourceS 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Paramete

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