ZXMN10A08E6TA Datasheet. Specs and Replacement
Type Designator: ZXMN10A08E6TA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 28.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT-26
ZXMN10A08E6TA substitution
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ZXMN10A08E6TA datasheet
zxmn10a08e6ta zxmn10a08e6tc.pdf
A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25 C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t... See More ⇒
zxmn10a08e6.pdf
A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9A Mechanical Data Case SOT23-6 ... See More ⇒
zxmn10a08dn8.pdf
ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒
zxmn10a08g.pdf
ZXMN10A08G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 2.9 100 0.300 @ VGS= 6V 2.6 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management G applications. Features S Low on-r... See More ⇒
Detailed specifications: ZXM66P02N8TA, ZXM66P02N8TC, ZXM66P03N8TA, ZXMD63C02X, ZXMN0545G4TA, ZXMN10A07FTA, ZXMN10A07FTC, ZXMN10A07ZTA, IRF4905, ZXMN10A08E6TC, ZXMN10A09KTC, ZXMN10A11GTA, ZXMN10A11GTC, ZXMN10A11KTC, ZXMN10A25GTA, ZXMN10A25KTC, ZXMN10B08E6TA
Keywords - ZXMN10A08E6TA MOSFET specs
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