ZXMN10A09KTC
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN10A09KTC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 10.1
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 7.7
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.3
nS
Cossⓘ - Capacitancia
de salida: 83
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085
Ohm
Paquete / Cubierta: TO-252-3L
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ZXMN10A09KTC
Datasheet (PDF)
..1. Size:655K diodes
zxmn10a09k zxmn10a09ktc.pdf 
A Product Line ofDiodes IncorporatedZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low input capacitance ID V(BR)DSS RDS(on) Low on-resistance TA = 25C Fast switching speed 85m @ VGS = 10V 7.7A Green Component and RoHS compliant (Note 1) 100V
4.1. Size:655K diodes
zxmn10a09k.pdf 
A Product Line ofDiodes IncorporatedZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low input capacitance ID V(BR)DSS RDS(on) Low on-resistance TA = 25C Fast switching speed 85m @ VGS = 10V 7.7A Green Component and RoHS compliant (Note 1) 100V
6.1. Size:174K diodes
zxmn10a08e6ta zxmn10a08e6tc.pdf 
A Product Line ofDiodes Incorporated ZXMN10A08E6100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t
6.2. Size:265K diodes
zxmn10a07fta zxmn10a07ftc.pdf 
A Product Line ofDiodes IncorporatedZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features Low On-ResistanceID Low ThresholdBVDSS RDS(ON) Max TA = +25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 0.76A Low Gate Drive 100V 900m @ VGS = 6V 0.67A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal
6.3. Size:330K diodes
zxmn10a07zta.pdf 
A Product Line of Diodes IncorporatedZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 1.4A Low Gate Drive 100V 900m @ VGS = 6V 1.2A Totally Lead-Free & Fully RoHS compliant (Not
6.4. Size:186K diodes
zxmn10a07z.pdf 
ZXMN10A07Z100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=100V : RDS(on)=0.7 ; ID=1.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT89 Low on-resistance
6.5. Size:234K diodes
zxmn10a08e6.pdf 
A Product Line ofDiodes IncorporatedZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9AMechanical Data Case: SOT23-6
6.6. Size:179K diodes
zxmn10a08dn8.pdf 
ZXMN10A08DN8100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistanc
6.7. Size:269K diodes
zxmn10a07f.pdf 
ZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT23 Low on-resistance
6.8. Size:441K diodes
zxmn10a08g.pdf 
ZXMN10A08G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.91000.300 @ VGS= 6V 2.6DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementGapplications.FeaturesS Low on-r
6.9. Size:1582K kexin
zxmn10a08g.pdf 
SMD Type MOSFETN-Channel MOSFETZXMN10A08G (KXMN10A08G)Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 100V ID = 2.9 A (VGS = 10V) RDS(ON) 250m (VGS = 10V)1 2 3D RDS(ON) 300m (VGS = 6V)0.2502.30 (typ)Gauge Plane1.GateG 2.Drain0.700.13.SourceS 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Paramete
6.10. Size:744K cn vbsemi
zxmn10a07zta.pdf 
ZXMN10A07ZTAwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.102 at VGS = 10 V 4.20.120 at VGS = 6 V 100 3.8 2.9 nC0.125 at VGS = 4.5 V 3.6APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs
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