All MOSFET. ZXMN10A09KTC Datasheet

 

ZXMN10A09KTC MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN10A09KTC
   Marking Code: ZXMN10A09
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 10.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-252-3L

 ZXMN10A09KTC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN10A09KTC Datasheet (PDF)

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