ZXMN10A25GTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN10A25GTA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.7 nS
Cossⓘ - Capacitancia de salida: 57 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de ZXMN10A25GTA MOSFET
ZXMN10A25GTA Datasheet (PDF)
zxmn10a25gta.pdf
ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist
zxmn10a25g.pdf
ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist
zxmn10a25k.pdf
ZXMN10A25K100V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) (V) ID (A)0.125 @ VGS= 10V 6.41000.150 @ VGS= 6V 5.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc
zxmn10a25ktc.pdf
A Product Line ofDiodes IncorporatedGreenZXMN10A25K100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note
Otros transistores... ZXMN10A07FTC , ZXMN10A07ZTA , ZXMN10A08E6TA , ZXMN10A08E6TC , ZXMN10A09KTC , ZXMN10A11GTA , ZXMN10A11GTC , ZXMN10A11KTC , AON7410 , ZXMN10A25KTC , ZXMN10B08E6TA , ZXMN10B08E6TC , ZXMN15A27KTC , ZXMN20B28KTC , ZXMN2A01E6TA , ZXMN2A01E6TC , ZXMN2A01FTA .
History: SM7575NSFH
History: SM7575NSFH
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