ZXMN2B14FHTA Todos los transistores

 

ZXMN2B14FHTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN2B14FHTA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOT-23
 

 Búsqueda de reemplazo de ZXMN2B14FHTA MOSFET

   - Selección ⓘ de transistores por parámetros

 

ZXMN2B14FHTA Datasheet (PDF)

 ..1. Size:424K  zetex
 zxmn2b14fhta.pdf pdf_icon

ZXMN2B14FHTA

ZXMN2B14FH20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.055 @ VGS= 4.5V 4.30.075 @ VGS= 2.5V 3.7200.100 @ VGS= 1.8V 3.2DescriptionThis new generation of trench MOSFETs from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low

 4.1. Size:435K  diodes
 zxmn2b14fh.pdf pdf_icon

ZXMN2B14FHTA

ZXMN2B14FH20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.055 @ VGS= 4.5V 4.30.075 @ VGS= 2.5V 3.7200.100 @ VGS= 1.8V 3.2DescriptionThis new generation of trench MOSFETs from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low

 8.1. Size:585K  diodes
 zxmn2b03e6.pdf pdf_icon

ZXMN2B14FHTA

ZXMN2B03E620V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.040 @ VGS= 4.5V 5.40.055 @ VGS= 2.5V 4.6200.075 @ VGS= 1.8V 4.0DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low ga

 8.2. Size:391K  diodes
 zxmn2b01f.pdf pdf_icon

ZXMN2B14FHTA

ZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low gate

MOSTRAR MÁS

Otros transistores... ZXMN2A02N8TA , ZXMN2A02X8TA , ZXMN2A02X8TC , ZXMN2A03E6TA , ZXMN2A03E6TC , ZXMN2A14FTA , ZXMN2B01FTA , ZXMN2B03E6TA , 18N50 , ZXMN2F30FHTA , ZXMN2F34FHTA , ZXMN2F34MATA , ZXMN3A01E6TA , ZXMN3A01E6TC , ZXMN3A01FTA , ZXMN3A01FTC , ZXMN3A01Z .

History: SSM3J313T

 

 
Back to Top

 


 
.