ZXMN2B14FHTA MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZXMN2B14FHTA
   Marking Code: 2B4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT-23

ZXMN2B14FHTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZXMN2B14FHTA Datasheet (PDF)

..1. Size:424K zetex
zxmn2b14fhta.pdf

ZXMN2B14FH20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.055 @ VGS= 4.5V 4.30.075 @ VGS= 2.5V 3.7200.100 @ VGS= 1.8V 3.2DescriptionThis new generation of trench MOSFETs from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low

4.1. Size:435K diodes
zxmn2b14fh.pdf

8.1. Size:585K diodes
zxmn2b03e6.pdf

ZXMN2B03E620V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.040 @ VGS= 4.5V 5.40.055 @ VGS= 2.5V 4.6200.075 @ VGS= 1.8V 4.0DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low ga

8.2. Size:391K diodes
zxmn2b01f.pdf

ZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low gate

8.3. Size:102K tysemi
zxmn2b01f.pdf

Product specificationZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from TY features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching spe

8.4. Size:381K zetex
zxmn2b01fta.pdf