ZXMN2F30FHTA Todos los transistores

 

ZXMN2F30FHTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN2F30FHTA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.6 nS
   Cossⓘ - Capacitancia de salida: 102 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT-23

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ZXMN2F30FHTA Datasheet (PDF)

 ..1. Size:411K  zetex
 zxmn2f30fhta.pdf pdf_icon

ZXMN2F30FHTA

ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC

 4.1. Size:414K  diodes
 zxmn2f30fh.pdf pdf_icon

ZXMN2F30FHTA

ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC

 4.2. Size:109K  tysemi
 zxmn2f30fh.pdf pdf_icon

ZXMN2F30FHTA

Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications

 7.1. Size:407K  diodes
 zxmn2f34ma.pdf pdf_icon

ZXMN2F30FHTA

ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices Features D Low

MOSTRAR MÁS

Otros transistores... ZXMN2A02X8TA , ZXMN2A02X8TC , ZXMN2A03E6TA , ZXMN2A03E6TC , ZXMN2A14FTA , ZXMN2B01FTA , ZXMN2B03E6TA , ZXMN2B14FHTA , 4N60 , ZXMN2F34FHTA , ZXMN2F34MATA , ZXMN3A01E6TA , ZXMN3A01E6TC , ZXMN3A01FTA , ZXMN3A01FTC , ZXMN3A01Z , ZXMN3A02N8TA .

 

 
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