ZXMN2F30FHTA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN2F30FHTA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.6 nS

Cossⓘ - Capacitancia de salida: 102 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: SOT-23

  📄📄 Copiar 

 Búsqueda de reemplazo de ZXMN2F30FHTA MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXMN2F30FHTA datasheet

 ..1. Size:411K  zetex
zxmn2f30fhta.pdf pdf_icon

ZXMN2F30FHTA

ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC

 4.1. Size:414K  diodes
zxmn2f30fh.pdf pdf_icon

ZXMN2F30FHTA

ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC

 4.2. Size:109K  tysemi
zxmn2f30fh.pdf pdf_icon

ZXMN2F30FHTA

Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications

 7.1. Size:407K  diodes
zxmn2f34ma.pdf pdf_icon

ZXMN2F30FHTA

ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices Features D Low

Otros transistores... ZXMN2A02X8TA, ZXMN2A02X8TC, ZXMN2A03E6TA, ZXMN2A03E6TC, ZXMN2A14FTA, ZXMN2B01FTA, ZXMN2B03E6TA, ZXMN2B14FHTA, 4N60, ZXMN2F34FHTA, ZXMN2F34MATA, ZXMN3A01E6TA, ZXMN3A01E6TC, ZXMN3A01FTA, ZXMN3A01FTC, ZXMN3A01Z, ZXMN3A02N8TA