ZXMN3A01E6TC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN3A01E6TC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.3 nS

Cossⓘ - Capacitancia de salida: 38 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT-23-6

  📄📄 Copiar 

 Búsqueda de reemplazo de ZXMN3A01E6TC MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXMN3A01E6TC datasheet

 ..1. Size:224K  zetex
 zxmn3a01e6tc.pdf pdf_icon

ZXMN3A01E6TC

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc

 3.1. Size:224K  zetex
 zxmn3a01e6ta.pdf pdf_icon

ZXMN3A01E6TC

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc

 4.1. Size:225K  diodes
 zxmn3a01e6.pdf pdf_icon

ZXMN3A01E6TC

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc

 6.1. Size:242K  diodes
 zxmn3a01z.pdf pdf_icon

ZXMN3A01E6TC

A Product Line of Diodes Incorporated ZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 5) Fast Switching Speed Low Gate Drive 120m @ VGS = 10V 3.3A Lead Free/RoHS Compliant (Note 1) 30V 180m @ VGS = 4.5V 2.7A

MOSTRAR MÁS

Otros transistores... ZXMN2A14FTA, ZXMN2B01FTA, ZXMN2B03E6TA, ZXMN2B14FHTA, ZXMN2F30FHTA, ZXMN2F34FHTA, ZXMN2F34MATA, ZXMN3A01E6TA, 10N65, ZXMN3A01FTA, ZXMN3A01FTC, ZXMN3A01Z, ZXMN3A02N8TA, ZXMN3A02X8TA, ZXMN3A02X8TC, ZXMN3A03E6TA, ZXMN3A03E6TC