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ZXMN3A01E6TC Spec and Replacement


   Type Designator: ZXMN3A01E6TC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.3 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23-6

 ZXMN3A01E6TC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN3A01E6TC Specs

 ..1. Size:224K  zetex
zxmn3a01e6tc.pdf pdf_icon

ZXMN3A01E6TC

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc... See More ⇒

 3.1. Size:224K  zetex
zxmn3a01e6ta.pdf pdf_icon

ZXMN3A01E6TC

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc... See More ⇒

 4.1. Size:225K  diodes
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ZXMN3A01E6TC

ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistanc... See More ⇒

 6.1. Size:242K  diodes
zxmn3a01z.pdf pdf_icon

ZXMN3A01E6TC

A Product Line of Diodes Incorporated ZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 5) Fast Switching Speed Low Gate Drive 120m @ VGS = 10V 3.3A Lead Free/RoHS Compliant (Note 1) 30V 180m @ VGS = 4.5V 2.7A ... See More ⇒

Detailed specifications: ZXMN2A14FTA , ZXMN2B01FTA , ZXMN2B03E6TA , ZXMN2B14FHTA , ZXMN2F30FHTA , ZXMN2F34FHTA , ZXMN2F34MATA , ZXMN3A01E6TA , 10N65 , ZXMN3A01FTA , ZXMN3A01FTC , ZXMN3A01Z , ZXMN3A02N8TA , ZXMN3A02X8TA , ZXMN3A02X8TC , ZXMN3A03E6TA , ZXMN3A03E6TC .

History: ZXMN10A11GTA

Keywords - ZXMN3A01E6TC MOSFET specs

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