ZXMN3A01Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN3A01Z
Código: 1S8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.97 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 2.6 nC
trⓘ - Tiempo de subida: 4.1 nS
Cossⓘ - Capacitancia de salida: 48 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de MOSFET ZXMN3A01Z
ZXMN3A01Z Datasheet (PDF)
zxmn3a01z.pdf
A Product Line of Diodes IncorporatedZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed Low Gate Drive 120m @ VGS = 10V 3.3A Lead Free/RoHS Compliant (Note 1) 30V 180m @ VGS = 4.5V 2.7A
zxmn3a01f.pdf
ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
zxmn3a01e6.pdf
ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc
zxmn3a01f.pdf
Product specificationZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from TY utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23
zxmn3a01e6tc.pdf
ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc
zxmn3a01ftc.pdf
ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
zxmn3a01fta.pdf
ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance
zxmn3a01e6ta.pdf
ZXMN3A01E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistanc
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