All MOSFET. ZXMN3A01Z Datasheet

 

ZXMN3A01Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN3A01Z
   Marking Code: 1S8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.6 nC
   trⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-89

 ZXMN3A01Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN3A01Z Datasheet (PDF)

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