ZXMN3B01FTA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN3B01FTA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.98 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: SOT-23

  📄📄 Copiar 

 Búsqueda de reemplazo de ZXMN3B01FTA MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXMN3B01FTA datasheet

 ..1. Size:468K  zetex
 zxmn3b01fta.pdf pdf_icon

ZXMN3B01FTA

ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-re

 5.1. Size:469K  diodes
 zxmn3b01f.pdf pdf_icon

ZXMN3B01FTA

ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-re

 5.2. Size:91K  tysemi
 zxmn3b01f.pdf pdf_icon

ZXMN3B01FTA

Product specification ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES

 7.1. Size:166K  diodes
 zxmn3b04n8.pdf pdf_icon

ZXMN3B01FTA

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low o

MOSTRAR MÁS

Otros transistores... ZXMN3A01Z, ZXMN3A02N8TA, ZXMN3A02X8TA, ZXMN3A02X8TC, ZXMN3A03E6TA, ZXMN3A03E6TC, ZXMN3A04KTC, ZXMN3A14FTA, 2N60, ZXMN3B04N8TA, ZXMN3B04N8TC, ZXMN3B14FTA, ZXMN3F30FHTA, ZXMN4A06GQ, ZXMN4A06GTA, ZXMN4A06KTC, ZXMN6A07FTA