ZXMN3B01FTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN3B01FTA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.98 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET ZXMN3B01FTA
ZXMN3B01FTA Datasheet (PDF)
zxmn3b01fta.pdf
ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re
zxmn3b01f.pdf
ZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-re
zxmn3b01f.pdf
Product specificationZXMN3B01F30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.15 ; ID=2ADESCRIPTIONThis new generation of Trench MOSFETs from Ty utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURES
zxmn3b04n8.pdf
ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o
zxmn3b04n8ta.pdf
ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o
zxmn3b04n8tc.pdf
ZXMN3B04N830V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVESUMMARYV(BR)DSS=30V : RDS(on)=0.025 ; ID= 8.9ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low o
Otros transistores... ZXMN3A01Z , ZXMN3A02N8TA , ZXMN3A02X8TA , ZXMN3A02X8TC , ZXMN3A03E6TA , ZXMN3A03E6TC , ZXMN3A04KTC , ZXMN3A14FTA , 8205A , ZXMN3B04N8TA , ZXMN3B04N8TC , ZXMN3B14FTA , ZXMN3F30FHTA , ZXMN4A06GQ , ZXMN4A06GTA , ZXMN4A06KTC , ZXMN6A07FTA .
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