ZXMN3B01FTA Datasheet. Specs and Replacement

Type Designator: ZXMN3B01FTA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.98 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-23

ZXMN3B01FTA substitution

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ZXMN3B01FTA datasheet

 ..1. Size:468K  zetex
 zxmn3b01fta.pdf pdf_icon

ZXMN3B01FTA

ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-re... See More ⇒

 5.1. Size:469K  diodes
 zxmn3b01f.pdf pdf_icon

ZXMN3B01FTA

ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-re... See More ⇒

 5.2. Size:91K  tysemi
 zxmn3b01f.pdf pdf_icon

ZXMN3B01FTA

Product specification ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES ... See More ⇒

 7.1. Size:166K  diodes
 zxmn3b04n8.pdf pdf_icon

ZXMN3B01FTA

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low o... See More ⇒

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Detailed specifications: ZXMN3A01Z, ZXMN3A02N8TA, ZXMN3A02X8TA, ZXMN3A02X8TC, ZXMN3A03E6TA, ZXMN3A03E6TC, ZXMN3A04KTC, ZXMN3A14FTA, 2N60, ZXMN3B04N8TA, ZXMN3B04N8TC, ZXMN3B14FTA, ZXMN3F30FHTA, ZXMN4A06GQ, ZXMN4A06GTA, ZXMN4A06KTC, ZXMN6A07FTA

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