ZXMN6A09KTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMN6A09KTC
   Código: ZXMN6A09
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 4.6 nS
   Cossⓘ - Capacitancia de salida: 134 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET ZXMN6A09KTC

ZXMN6A09KTC Datasheet (PDF)

..1. Size:631K diodes
zxmn6a09ktc.pdf

A Product Line ofDiodes IncorporatedGreenZXMN6A09K60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID BVDSS Max RDS(on) TA = 25C Fast switching speed (Note 3) Low gate drive 40m @ VGS = 10V 7.7A Lead-Free Finish; RoHS compliant (Note 1) 60V 60m @ VGS = 4.5V 6.3A Halogen and Antimony Free.

5.1. Size:624K diodes
zxmn6a09k.pdf

ZXMN6A09K60V N-channel enhancement mode MOSFET in DPAKSummary V(BR)DSS=60V : RDS(on)=0.040 ; ID=12.2A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistan

6.1. Size:584K diodes
zxmn6a09dn8.pdf

ZXMN6A09DN860V SO8 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 5.6600.060 @ VGS= 4.5V 4.6DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

6.2. Size:558K diodes
zxmn6a09g.pdf

ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 7.5600.060 @ VGS= 4.5V 6.2DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

6.3. Size:554K zetex
zxmn6a09gta.pdf

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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