All MOSFET. ZXMN6A09KTC Datasheet

 

ZXMN6A09KTC MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN6A09KTC
   Marking Code: ZXMN6A09
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 10.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 11.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 134 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-252

 ZXMN6A09KTC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN6A09KTC Datasheet (PDF)

 ..1. Size:631K  diodes
 zxmn6a09ktc.pdf

ZXMN6A09KTC ZXMN6A09KTC

A Product Line ofDiodes IncorporatedGreenZXMN6A09K60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID BVDSS Max RDS(on) TA = 25C Fast switching speed (Note 3) Low gate drive 40m @ VGS = 10V 7.7A Lead-Free Finish; RoHS compliant (Note 1) 60V 60m @ VGS = 4.5V 6.3A Halogen and Antimony Free.

 5.1. Size:624K  diodes
 zxmn6a09k.pdf

ZXMN6A09KTC ZXMN6A09KTC

ZXMN6A09K60V N-channel enhancement mode MOSFET in DPAKSummary V(BR)DSS=60V : RDS(on)=0.040 ; ID=12.2A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistan

 6.1. Size:584K  diodes
 zxmn6a09dn8.pdf

ZXMN6A09KTC ZXMN6A09KTC

ZXMN6A09DN860V SO8 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 5.6600.060 @ VGS= 4.5V 4.6DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

 6.2. Size:558K  diodes
 zxmn6a09g.pdf

ZXMN6A09KTC ZXMN6A09KTC

ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 7.5600.060 @ VGS= 4.5V 6.2DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

 6.3. Size:554K  zetex
 zxmn6a09gta.pdf

ZXMN6A09KTC ZXMN6A09KTC

ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.040 @ VGS= 10V 7.5600.060 @ VGS= 4.5V 6.2DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: ZXMN3A04K

 

 
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