ZXMN6A11GTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMN6A11GTC
   Código: ZXMN6A11
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 3.1 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 8 nC
   Tiempo de subida (tr): 3.5 nS
   Conductancia de drenaje-sustrato (Cd): 35.2 pF
   Resistencia entre drenaje y fuente RDS(on): 0.12 Ohm
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de MOSFET ZXMN6A11GTC

ZXMN6A11GTC Datasheet (PDF)

..1. Size:615K diodes
zxmn6a11gtc zxmn6a11g zxmn6a11gta.pdf

A Product Line ofDiodes IncorporatedZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low gate drive V(BR)DSS RDS(on) TA = 25C Low input capacitance Green component and RoHS compliant (Note 1) 120m @ VGS= 10V 4.4A Qualified to AEC-Q101 Standards for High Reliability 60V 180m

5.1. Size:538K diodes
zxmn6a11g.pdf

A Product Line of Diodes Incorporated GreenZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID V(BR)DSS RDS(on) Low Gate Drive TA = +25C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 4.4A 120m @ VGS= 10V Halogen and Antimony Free. Green Device (Note 3) 6

6.1. Size:649K diodes
zxmn6a11dn8.pdf

ZXMN6A11DN860V SO8 Dual N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.120 @ VGS= 10V 3.2600.180 @ VGS= 4.5V 2.6DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD1 D2 Low on-

6.2. Size:201K diodes
zxmn6a11zta.pdf

A Product Line of Diodes IncorporatedZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green

6.3. Size:581K diodes
zxmn6a11z.pdf

ZXMN6A11Z60V SOT89 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.120 @ VGS= 10V 3.6600.180 @ VGS= 4.5V 2.9DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc

6.4. Size:904K cn vbsemi
zxmn6a11z.pdf

ZXMN6A11Zwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise

6.5. Size:4010K cn tech public
zxmn6a11zta-p.pdf

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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