All MOSFET. ZXMN6A11GTC Datasheet

 

ZXMN6A11GTC Datasheet and Replacement


   Type Designator: ZXMN6A11GTC
   Marking Code: ZXMN6A11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 35.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-223
 
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ZXMN6A11GTC Datasheet (PDF)

 ..1. Size:615K  diodes
zxmn6a11gtc zxmn6a11g zxmn6a11gta.pdf pdf_icon

ZXMN6A11GTC

A Product Line ofDiodes IncorporatedZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low gate drive V(BR)DSS RDS(on) TA = 25C Low input capacitance Green component and RoHS compliant (Note 1) 120m @ VGS= 10V 4.4A Qualified to AEC-Q101 Standards for High Reliability 60V 180m

 5.1. Size:538K  diodes
zxmn6a11g.pdf pdf_icon

ZXMN6A11GTC

A Product Line of Diodes Incorporated GreenZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID V(BR)DSS RDS(on) Low Gate Drive TA = +25C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 4.4A 120m @ VGS= 10V Halogen and Antimony Free. Green Device (Note 3) 6

 6.1. Size:649K  diodes
zxmn6a11dn8.pdf pdf_icon

ZXMN6A11GTC

ZXMN6A11DN860V SO8 Dual N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.120 @ VGS= 10V 3.2600.180 @ VGS= 4.5V 2.6DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD1 D2 Low on-

 6.2. Size:201K  diodes
zxmn6a11zta.pdf pdf_icon

ZXMN6A11GTC

A Product Line of Diodes IncorporatedZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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