ZXMN7A11KTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN7A11KTC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 8.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: DPAK
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ZXMN7A11KTC Datasheet (PDF)
zxmn7a11ktc.pdf
ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa
zxmn7a11k.pdf
ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa
zxmn7a11g.pdf
ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast
zxmn7a11gta.pdf
ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast
Otros transistores... ZXMN6A09GTA , ZXMN6A09KTC , ZXMN6A11GTA , ZXMN6A11GTC , ZXMN6A11ZTA , ZXMN6A25GTA , ZXMN6A25KTC , ZXMN7A11GTA , IRFP064N , ZXMNS3BM832TA , ZXMP10A13FTA , ZXMP10A16KTC , ZXMP10A17E6Q , ZXMP10A17E6TA , ZXMP10A18GTA , ZXMP10A18KTC , ZXMP2120E5TA .
History: IXTH2N150L | TPU70R360M | SIHF9Z24 | HTD360N10 | CTD02N007 | 2SK241 | TPC70R450C
History: IXTH2N150L | TPU70R360M | SIHF9Z24 | HTD360N10 | CTD02N007 | 2SK241 | TPC70R450C
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