ZXMN7A11KTC Todos los transistores

 

ZXMN7A11KTC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN7A11KTC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 8.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: DPAK

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ZXMN7A11KTC datasheet

 ..1. Size:520K  zetex
 zxmn7a11ktc.pdf pdf_icon

ZXMN7A11KTC

ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fa

 5.1. Size:524K  diodes
 zxmn7a11k.pdf pdf_icon

ZXMN7A11KTC

ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fa

 6.1. Size:417K  diodes
 zxmn7a11g.pdf pdf_icon

ZXMN7A11KTC

ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast

 6.2. Size:415K  zetex
 zxmn7a11gta.pdf pdf_icon

ZXMN7A11KTC

ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast

MOSTRAR MÁS

Otros transistores... ZXMN6A09GTA , ZXMN6A09KTC , ZXMN6A11GTA , ZXMN6A11GTC , ZXMN6A11ZTA , ZXMN6A25GTA , ZXMN6A25KTC , ZXMN7A11GTA , AO4468 , ZXMNS3BM832TA , ZXMP10A13FTA , ZXMP10A16KTC , ZXMP10A17E6Q , ZXMP10A17E6TA , ZXMP10A18GTA , ZXMP10A18KTC , ZXMP2120E5TA .

History: 2SK3870-01 | GN10N65A4 | ZXM66P03N8 | SW3N10 | SI3475DV | RU8590S | SLD65R380E7C

 

 

 

 

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