ZXMN7A11KTC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ZXMN7A11KTC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 8.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 35 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: DPAK
- подбор MOSFET транзистора по параметрам
ZXMN7A11KTC Datasheet (PDF)
zxmn7a11ktc.pdf
ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa
zxmn7a11k.pdf
ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa
zxmn7a11g.pdf
ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast
zxmn7a11gta.pdf
ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: SM1A00NSG | SSM3K335R | IRC330 | R6524KNX | STP4N80K5 | SI4834BDY | SI2301ADS-T1
History: SM1A00NSG | SSM3K335R | IRC330 | R6524KNX | STP4N80K5 | SI4834BDY | SI2301ADS-T1
Список транзисторов
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