ZXMP10A18KTC Todos los transistores

 

ZXMP10A18KTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMP10A18KTC
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.8 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

ZXMP10A18KTC Datasheet (PDF)

 ..1. Size:820K  zetex
zxmp10a18ktc.pdf pdf_icon

ZXMP10A18KTC

ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on

 4.1. Size:823K  diodes
zxmp10a18k.pdf pdf_icon

ZXMP10A18KTC

ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on

 4.2. Size:904K  cn vbsemi
zxmp10a18k.pdf pdf_icon

ZXMP10A18KTC

ZXMP10A18Kwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Swit

 5.1. Size:277K  diodes
zxmp10a18g.pdf pdf_icon

ZXMP10A18KTC

ZXMP10A18G100V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = - 100V : RDS(on) = 0.150 ; ID = - 3.7ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-r

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TPCS8007-H | BSP110 | AUIRFR4620 | NCE65T900D | PSMN006-20K | SGSP321 | AUIRFP4409

 

 
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