Справочник MOSFET. ZXMP10A18KTC

 

ZXMP10A18KTC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMP10A18KTC
   Маркировка: ZXMP10A18
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 10.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 26.9 nC
   trⓘ - Время нарастания: 6.8 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для ZXMP10A18KTC

 

 

ZXMP10A18KTC Datasheet (PDF)

 ..1. Size:820K  zetex
 zxmp10a18ktc.pdf

ZXMP10A18KTC ZXMP10A18KTC

ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on

 4.1. Size:823K  diodes
 zxmp10a18k.pdf

ZXMP10A18KTC ZXMP10A18KTC

ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on

 4.2. Size:904K  cn vbsemi
 zxmp10a18k.pdf

ZXMP10A18KTC ZXMP10A18KTC

ZXMP10A18Kwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Swit

 5.1. Size:277K  diodes
 zxmp10a18g.pdf

ZXMP10A18KTC ZXMP10A18KTC

ZXMP10A18G100V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = - 100V : RDS(on) = 0.150 ; ID = - 3.7ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-r

 5.2. Size:608K  diodes
 zxmp10a18gta.pdf

ZXMP10A18KTC ZXMP10A18KTC

A Product Line ofDiodes IncorporatedZXMP10A18G100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Green component. Lead Free Finish / RoHS compliant (Notes 3) (Note 1) 150m @ VGS = -10V -3.7A Qualified to AEC-Q101 Standards for High Reliability

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History: 5N65L-TN3-R | 5N60G-TA3-T

 

 
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