ZXMP2120FFTA Todos los transistores

 

ZXMP2120FFTA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP2120FFTA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.137 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 28 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de ZXMP2120FFTA MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXMP2120FFTA datasheet

 ..1. Size:413K  zetex
zxmp2120ffta.pdf pdf_icon

ZXMP2120FFTA

ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from

 4.1. Size:417K  diodes
zxmp2120ff.pdf pdf_icon

ZXMP2120FFTA

ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from

 6.1. Size:386K  diodes
zxmp2120e5.pdf pdf_icon

ZXMP2120FFTA

ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device inclu

 6.2. Size:416K  diodes
zxmp2120g4.pdf pdf_icon

ZXMP2120FFTA

ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ

Otros transistores... ZXMNS3BM832TA , ZXMP10A13FTA , ZXMP10A16KTC , ZXMP10A17E6Q , ZXMP10A17E6TA , ZXMP10A18GTA , ZXMP10A18KTC , ZXMP2120E5TA , 50N06 , ZXMP2120G4TA , ZXMP3A13FTA , ZXMP3A16GTA , ZXMP3A16N8TA , ZXMP3A17E6TA , ZXMP3F30FHTA , ZXMP4A16GTA , ZXMP4A16KTC .

History: 2SK2052 | STF7LN80K5 | 4N60KG-TF2-T | 2SK3574-S

 

 

 

 

↑ Back to Top
.