Справочник MOSFET. ZXMP2120FFTA

 

ZXMP2120FFTA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMP2120FFTA
   Маркировка: 1C4
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 0.137 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 15 ns
   Выходная емкость (Cd): 25 pf
   Сопротивление сток-исток открытого транзистора (Rds): 28 Ohm
   Тип корпуса: SOT23

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ZXMP2120FFTA Datasheet (PDF)

 ..1. Size:413K  zetex
zxmp2120ffta.pdf

ZXMP2120FFTA
ZXMP2120FFTA

ZXMP2120FF200V SOT23F P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (mA)-200 28 @ VGS= -10V -137DescriptionThis 200V enhancement mode P-channel MOSFET provides users witha competitive specification offering efficient power handling capability,high impedance and freedom from thermal runaway and thermallyinduced secondary breakdown.Applications benefiting from

 4.1. Size:417K  diodes
zxmp2120ff.pdf

ZXMP2120FFTA
ZXMP2120FFTA

ZXMP2120FF200V SOT23F P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (mA)-200 28 @ VGS= -10V -137DescriptionThis 200V enhancement mode P-channel MOSFET provides users witha competitive specification offering efficient power handling capability,high impedance and freedom from thermal runaway and thermallyinduced secondary breakdown.Applications benefiting from

 6.1. Size:386K  diodes
zxmp2120e5.pdf

ZXMP2120FFTA
ZXMP2120FFTA

ZXMP2120E5200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device inclu

 6.2. Size:416K  diodes
zxmp2120g4.pdf

ZXMP2120FFTA
ZXMP2120FFTA

ZXMP2120G4200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

 6.3. Size:384K  zetex
zxmp2120e5ta.pdf

ZXMP2120FFTA
ZXMP2120FFTA

ZXMP2120E5200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device inclu

 6.4. Size:415K  zetex
zxmp2120g4ta.pdf

ZXMP2120FFTA
ZXMP2120FFTA

ZXMP2120G4200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

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