ZXMP4A57E6TA Todos los transistores

 

ZXMP4A57E6TA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP4A57E6TA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.3 nS

Cossⓘ - Capacitancia de salida: 122 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SOT-26

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ZXMP4A57E6TA datasheet

 ..1. Size:659K  diodes
zxmp4a57e6ta.pdf pdf_icon

ZXMP4A57E6TA

A Product Line of Diodes Incorporated ZXMP4A57E6 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID max Low gate drive V(BR)DSS RDS(on) max TA = 25 C Low input capacitance Lead Free , RoHS Compliant (Note 1) 80m @ VGS= -10V -3.7 A Halogen and Antimony Free. "Green" Device (Note 2) -40V Qu

 8.1. Size:271K  diodes
zxmp4a16g.pdf pdf_icon

ZXMP4A57E6TA

ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -40V RDS(on) = 0.060 ID = -6.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistanc

 8.2. Size:576K  diodes
zxmp4a16k.pdf pdf_icon

ZXMP4A57E6TA

ZXMP4A16K 40V P-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features D Low on-resistance

 8.3. Size:574K  zetex
zxmp4a16ktc.pdf pdf_icon

ZXMP4A57E6TA

ZXMP4A16K 40V P-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features D Low on-resistance

Otros transistores... ZXMP2120G4TA , ZXMP3A13FTA , ZXMP3A16GTA , ZXMP3A16N8TA , ZXMP3A17E6TA , ZXMP3F30FHTA , ZXMP4A16GTA , ZXMP4A16KTC , AO3400 , ZXMP6A13FQ , ZXMP6A13FTA , ZXMP6A13GTA , ZXMP6A16KTC , ZXMP6A17E6Q , ZXMP6A17E6TA , ZXMP6A17GQ , ZXMP6A17GTA .

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