Справочник MOSFET. ZXMP4A57E6TA

 

ZXMP4A57E6TA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMP4A57E6TA
   Маркировка: 4A57
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 2.9 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 9 nC
   Время нарастания (tr): 3.3 ns
   Выходная емкость (Cd): 122 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
   Тип корпуса: SOT-26

 Аналог (замена) для ZXMP4A57E6TA

 

 

ZXMP4A57E6TA Datasheet (PDF)

 ..1. Size:659K  diodes
zxmp4a57e6ta.pdf

ZXMP4A57E6TA
ZXMP4A57E6TA

A Product Line ofDiodes IncorporatedZXMP4A57E640V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID max Low gate drive V(BR)DSS RDS(on) max TA = 25C Low input capacitance Lead Free, RoHS Compliant (Note 1) 80m @ VGS= -10V -3.7 A Halogen and Antimony Free. "Green" Device (Note 2) -40V Qu

 8.1. Size:271K  diodes
zxmp4a16g.pdf

ZXMP4A57E6TA
ZXMP4A57E6TA

ZXMP4A16G40V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistanc

 8.2. Size:576K  diodes
zxmp4a16k.pdf

ZXMP4A57E6TA
ZXMP4A57E6TA

ZXMP4A16K40V P-channel enhancement mode MOSFETSummary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9ADescription This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications. Features D Low on-resistance

 8.3. Size:574K  zetex
zxmp4a16ktc.pdf

ZXMP4A57E6TA
ZXMP4A57E6TA

ZXMP4A16K40V P-channel enhancement mode MOSFETSummary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9ADescription This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications. Features D Low on-resistance

 8.4. Size:270K  zetex
zxmp4a16gta.pdf

ZXMP4A57E6TA
ZXMP4A57E6TA

ZXMP4A16G40V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistanc

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