ZXMP4A57E6TA
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMP4A57E6TA
Маркировка: 4A57
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 2.9
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 9
nC
trⓘ -
Время нарастания: 3.3
ns
Cossⓘ - Выходная емкость: 122
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08
Ohm
Тип корпуса:
SOT-26
Аналог (замена) для ZXMP4A57E6TA
ZXMP4A57E6TA
Datasheet (PDF)
..1. Size:659K diodes
zxmp4a57e6ta.pdf A Product Line ofDiodes IncorporatedZXMP4A57E640V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID max Low gate drive V(BR)DSS RDS(on) max TA = 25C Low input capacitance Lead Free, RoHS Compliant (Note 1) 80m @ VGS= -10V -3.7 A Halogen and Antimony Free. "Green" Device (Note 2) -40V Qu
8.1. Size:271K diodes
zxmp4a16g.pdf ZXMP4A16G40V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistanc
8.2. Size:576K diodes
zxmp4a16k.pdf ZXMP4A16K40V P-channel enhancement mode MOSFETSummary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9ADescription This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications. Features D Low on-resistance
8.3. Size:574K zetex
zxmp4a16ktc.pdf ZXMP4A16K40V P-channel enhancement mode MOSFETSummary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9ADescription This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications. Features D Low on-resistance
8.4. Size:270K zetex
zxmp4a16gta.pdf ZXMP4A16G40V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistanc
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