ZXMP6A13GTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMP6A13GTA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.2 nS
   Cossⓘ - Capacitancia de salida: 25.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
   Paquete / Cubierta: SOT-223

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ZXMP6A13GTA Datasheet (PDF)

..1. Size:652K diodes
zxmp6a13gta.pdf

A Product Line ofDiodes IncorporatedZXMP6A13G60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 390m @ VGS = -10V -2.3A Lead Free, RoHS Compliant (Note 1) -60V Halogen and Antimony Free. "Green" Device (Note 2) 595m @ VGS =

5.1. Size:686K diodes
zxmp6a13g.pdf

A Product Line ofDiodes IncorporatedZXMP6A13G60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 390m @ VGS= -10V -2.3A Qualified to AEC-Q101 Standards for High Reliability -60V

6.1. Size:282K diodes
zxmp6a13fq.pdf

ZXMP6A13FQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = +25C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free. Green Device (Note 3) Qu

6.2. Size:294K diodes
zxmp6a13f.pdf

A Product Line ofDiodes IncorporatedZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Fast switching speed ID Low input capacitance V(BR)DSS RDS(on) TA = 25C Low gate charge Qualified to AEC-Q101 Standards for High Reliability 400m @ VGS= -10V 400m = -1

6.3. Size:317K diodes
zxmp6a13fta.pdf

A Product Line ofDiodes IncorporatedZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = 25C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free.

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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