ZXMP6A13GTA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMP6A13GTA
Маркировка: ZXMP6A13
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 1.7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 10 nC
Время нарастания (tr): 2.2 ns
Выходная емкость (Cd): 25.7 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.039 Ohm
Тип корпуса: SOT-223
Аналог (замена) для ZXMP6A13GTA
ZXMP6A13GTA Datasheet (PDF)
zxmp6a13gta.pdf
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A Product Line ofDiodes IncorporatedZXMP6A13G60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 390m @ VGS = -10V -2.3A Lead Free, RoHS Compliant (Note 1) -60V Halogen and Antimony Free. "Green" Device (Note 2) 595m @ VGS =
zxmp6a13g.pdf
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A Product Line ofDiodes IncorporatedZXMP6A13G60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 390m @ VGS= -10V -2.3A Qualified to AEC-Q101 Standards for High Reliability -60V
zxmp6a13fq.pdf
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ZXMP6A13FQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = +25C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free. Green Device (Note 3) Qu
zxmp6a13f.pdf
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A Product Line ofDiodes IncorporatedZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Fast switching speed ID Low input capacitance V(BR)DSS RDS(on) TA = 25C Low gate charge Qualified to AEC-Q101 Standards for High Reliability 400m @ VGS= -10V 400m = -1
zxmp6a13fta.pdf
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A Product Line ofDiodes IncorporatedZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = 25C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free.
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C