ZXMP6A17E6TA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMP6A17E6TA
   Código: 6A17
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 3.4 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: SOT-26

Búsqueda de reemplazo de MOSFET ZXMP6A17E6TA

ZXMP6A17E6TA Datasheet (PDF)

..1. Size:665K diodes
zxmp6a17e6 zxmp6a17e6ta.pdf

A Product Line ofDiodes IncorporatedZXMP6A17E660V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Low threshold(Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free, RoHS Compliant (Note 1) -60V 190m @

4.1. Size:493K diodes
zxmp6a17e6q.pdf

ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 7) Low Gate Drive -3.0 A 125m @ VGS = -10V Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

4.2. Size:542K diodes
zxmp6a17e6.pdf

ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 6) Low Gate Drive 125m @ VGS = -10V -3.0 A Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

6.1. Size:170K diodes
zxmp6a17dn8.pdf

ZXMP6A17DN8DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2ADESCRIPTIONThis new generation of high cell density trench MOSFETs from Zetex utilizes aunique structure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES

6.2. Size:684K diodes
zxmp6a17k.pdf

A Product Line ofDiodes IncorporatedZXMP6A17K60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A

6.3. Size:681K diodes
zxmp6a17ktc.pdf

6.4. Size:635K diodes
zxmp6a17g zxmp6a17gta.pdf

A Product Line ofDiodes IncorporatedZXMP6A17G60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 125m @ VGS= -10V -4.3A Green component and RoHS compliant (Note 1) -60V Qualified to AEC-Q101 Standards for High Reliability 190m

6.5. Size:667K diodes
zxmp6a17n8 zxmp6a17n8tc.pdf

A Product Line ofDiodes IncorporatedZXMP6A17N860V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low input capacitance TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS = -10V -3.4A Qualified to AEC-Q101 Standards for High Reliability -60V 190m @ VGS = -4.5V -2

6.6. Size:216K diodes
zxmp6a17gq.pdf

ZXMP6A17GQ Green60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Quali

6.7. Size:467K diodes
zxmp6a17g.pdf

ZXMP6A17G Green60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed BVDSS RDS(on) TA = +25C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

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