ZXMP6A17E6TA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMP6A17E6TA
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 3.4 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
Тип корпуса: SOT-26
Аналог (замена) для ZXMP6A17E6TA
ZXMP6A17E6TA Datasheet (PDF)
zxmp6a17e6 zxmp6a17e6ta.pdf
A Product Line ofDiodes IncorporatedZXMP6A17E660V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Low threshold(Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free, RoHS Compliant (Note 1) -60V 190m @
zxmp6a17e6q.pdf
ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 7) Low Gate Drive -3.0 A 125m @ VGS = -10V Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A
zxmp6a17e6.pdf
ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 6) Low Gate Drive 125m @ VGS = -10V -3.0 A Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A
zxmp6a17dn8.pdf
ZXMP6A17DN8DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2ADESCRIPTIONThis new generation of high cell density trench MOSFETs from Zetex utilizes aunique structure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES
zxmp6a17k.pdf
A Product Line ofDiodes IncorporatedZXMP6A17K60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A
zxmp6a17ktc.pdf
A Product Line ofDiodes IncorporatedZXMP6A17K60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A
zxmp6a17g zxmp6a17gta.pdf
A Product Line ofDiodes IncorporatedZXMP6A17G60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 125m @ VGS= -10V -4.3A Green component and RoHS compliant (Note 1) -60V Qualified to AEC-Q101 Standards for High Reliability 190m
zxmp6a17n8 zxmp6a17n8tc.pdf
A Product Line ofDiodes IncorporatedZXMP6A17N860V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low input capacitance TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS = -10V -3.4A Qualified to AEC-Q101 Standards for High Reliability -60V 190m @ VGS = -4.5V -2
zxmp6a17gq.pdf
ZXMP6A17GQ Green60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Quali
zxmp6a17g.pdf
ZXMP6A17G Green60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed BVDSS RDS(on) TA = +25C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918