Справочник MOSFET. ZXMP6A17E6TA

 

ZXMP6A17E6TA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMP6A17E6TA
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.4 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
   Тип корпуса: SOT-26
     - подбор MOSFET транзистора по параметрам

 

ZXMP6A17E6TA Datasheet (PDF)

 ..1. Size:665K  diodes
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ZXMP6A17E6TA

A Product Line ofDiodes IncorporatedZXMP6A17E660V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Low threshold(Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free, RoHS Compliant (Note 1) -60V 190m @

 4.1. Size:493K  diodes
zxmp6a17e6q.pdfpdf_icon

ZXMP6A17E6TA

ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 7) Low Gate Drive -3.0 A 125m @ VGS = -10V Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

 4.2. Size:542K  diodes
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ZXMP6A17E6TA

ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 6) Low Gate Drive 125m @ VGS = -10V -3.0 A Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

 6.1. Size:170K  diodes
zxmp6a17dn8.pdfpdf_icon

ZXMP6A17E6TA

ZXMP6A17DN8DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2ADESCRIPTIONThis new generation of high cell density trench MOSFETs from Zetex utilizes aunique structure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HTB025N03 | IRF7425PBF | IXTX550N055T2 | 2SK3013 | PH1875L | SIHL510S | UF830L-TQ2-T

 

 
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