ZXMP6A18KTC Todos los transistores

 

ZXMP6A18KTC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP6A18KTC

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 10.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.8 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: DPAK

 Búsqueda de reemplazo de ZXMP6A18KTC MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXMP6A18KTC datasheet

 ..1. Size:580K  zetex
 zxmp6a18ktc.pdf pdf_icon

ZXMP6A18KTC

ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-

 ..2. Size:882K  cn vbsemi
 zxmp6a18ktc.pdf pdf_icon

ZXMP6A18KTC

ZXMP6A18KTC www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge

 5.1. Size:583K  diodes
 zxmp6a18k.pdf pdf_icon

ZXMP6A18KTC

ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-

 6.1. Size:183K  diodes
 zxmp6a18dn8.pdf pdf_icon

ZXMP6A18KTC

ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistan

MOSTRAR MÁS

Otros transistores... ZXMP6A13GTA , ZXMP6A16KTC , ZXMP6A17E6Q , ZXMP6A17E6TA , ZXMP6A17GQ , ZXMP6A17GTA , ZXMP6A17KTC , ZXMP6A17N8TC , IRF630 , ZXMP7A17GQ , ZXMP7A17GTA , ZXMP7A17KTC , ZXMS6002GQ , ZXMS6004DGQ , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E

 

 

 

Popular searches

2sc1364 replacement | 2sd665 | 7506 mosfet datasheet | 2sb1186a | a1695 datasheet | 3415 transistor | 072ne6pt | 2sd388

 

 

↑ Back to Top
.