ZXMP6A18KTC
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMP6A18KTC
Marking Code: ZXMP6A18
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 10.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 10.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 5.8
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
DPAK
ZXMP6A18KTC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMP6A18KTC
Datasheet (PDF)
..1. Size:580K zetex
zxmp6a18ktc.pdf
ZXMP6A18K60V P-channel enhancement mode MOSFETSummaryV(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description DThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,Gpower management applications. Features S Low on-
..2. Size:882K cn vbsemi
zxmp6a18ktc.pdf
ZXMP6A18KTCwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge
5.1. Size:583K diodes
zxmp6a18k.pdf
ZXMP6A18K60V P-channel enhancement mode MOSFETSummaryV(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description DThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,Gpower management applications. Features S Low on-
6.1. Size:183K diodes
zxmp6a18dn8.pdf
ZXMP6A18DN8DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistan
6.2. Size:925K cn vbsemi
zxmp6a18dn8ta.pdf
ZXMP6A18DN8TAwww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25T
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