ZXMP7A17GQ Todos los transistores

 

ZXMP7A17GQ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP7A17GQ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.4 nS

Cossⓘ - Capacitancia de salida: 52 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: SOT-223

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ZXMP7A17GQ datasheet

 ..1. Size:662K  diodes
zxmp7a17gq.pdf pdf_icon

ZXMP7A17GQ

 5.1. Size:428K  diodes
zxmp7a17g.pdf pdf_icon

ZXMP7A17GQ

ZXMP7A17G 70V P-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.16 ID=3.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance G Fas

 5.2. Size:426K  zetex
zxmp7a17gta.pdf pdf_icon

ZXMP7A17GQ

ZXMP7A17G 70V P-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.16 ID=3.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance G Fas

 6.1. Size:532K  diodes
zxmp7a17k.pdf pdf_icon

ZXMP7A17GQ

ZXMP7A17K 70V P-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.16 ID=5.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance G Fas

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