ZXMP7A17GQ Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ZXMP7A17GQ
Маркировка: ZXMP7A17
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 11 nC
trⓘ - Время нарастания: 3.4 ns
Cossⓘ - Выходная емкость: 52 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: SOT-223
- подбор MOSFET транзистора по параметрам
ZXMP7A17GQ Datasheet (PDF)
zxmp7a17gq.pdf

ZXMP7A17GQ Green70V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS RDS(on) TA = +25C Low On-Resistance Fast Switching Speed 160m @ VGS= -10V -2.6A -70V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 250m @ VGS= -4.5V -1.6A Halogen and Antimony Free.
zxmp7a17g.pdf

ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
zxmp7a17gta.pdf

ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
zxmp7a17k.pdf

ZXMP7A17K70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=5.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .



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