SI1012R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI1012R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
Paquete / Cubierta: SC-75A
Búsqueda de reemplazo de SI1012R MOSFET
SI1012R Datasheet (PDF)
si1012r si1012x.pdf

Si1012R, Si1012XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.8 V RatedVDS (V) RDS(on) ()ID (mA) Gate-Source ESD Protected: 2000 V0.70 at VGS = 4.5 V 600 High-Side Switching0.85 at VGS = 2.5 V Low On-Resistance: 0.7 20 500 Low Threshold: 0.8 V (typ.)1.25 at VGS = 1.8 V 350 Fast Switc
si1012r-x.pdf

Si1012R/XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated Gate-Source ESD Protected: 2000 V0.85 at VGS = 2.5 V 20 500 High-Side Switching1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7
si1012cr.pdf

Si1012CRVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.2 V RatedVDS (V) RDS(on) () ID (mA) Qg (Typ.) 100 % Rg Tested0.396 at VGS = 4.5 V 600 Gate-Source ESD Protected: 1000 V Material categorization:0.456 at VGS = 2.5 V 500For definitions of compliance please see20 0.750.546 at VGS = 1.8 V 350www.vis
si1012.pdf

SI1012Features Low Threshold ESD Protected Gate Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55C to
Otros transistores... ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , SI1002R , SI1011X , SI1012CR , 4N60 , SI1012X , SI1013CX , SI1013R , SI1013X , SI1016CX , SI1021R , SI1022R , SI1023CX .
History: FHD4N65D | FMW30N60S1HF | SSM6P49NU | FHA20N60A | SHD226007 | KI4501ADY | IRL3803V
History: FHD4N65D | FMW30N60S1HF | SSM6P49NU | FHA20N60A | SHD226007 | KI4501ADY | IRL3803V



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