SI1012R
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI1012R
Маркировка: C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.15
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 6
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.9
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.5
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 5
ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.7
Ohm
Тип корпуса:
SC-75A
Аналог (замена) для SI1012R
SI1012R
Datasheet (PDF)
..1. Size:230K vishay
si1012r si1012x.pdf 
Si1012R, Si1012XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.8 V RatedVDS (V) RDS(on) ()ID (mA) Gate-Source ESD Protected: 2000 V0.70 at VGS = 4.5 V 600 High-Side Switching0.85 at VGS = 2.5 V Low On-Resistance: 0.7 20 500 Low Threshold: 0.8 V (typ.)1.25 at VGS = 1.8 V 350 Fast Switc
0.1. Size:175K vishay
si1012r-x.pdf 
Si1012R/XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated Gate-Source ESD Protected: 2000 V0.85 at VGS = 2.5 V 20 500 High-Side Switching1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7
8.1. Size:154K vishay
si1012cr.pdf 
Si1012CRVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.2 V RatedVDS (V) RDS(on) () ID (mA) Qg (Typ.) 100 % Rg Tested0.396 at VGS = 4.5 V 600 Gate-Source ESD Protected: 1000 V Material categorization:0.456 at VGS = 2.5 V 500For definitions of compliance please see20 0.750.546 at VGS = 1.8 V 350www.vis
8.2. Size:869K mcc
si1012.pdf 
SI1012Features Low Threshold ESD Protected Gate Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55C to
8.3. Size:477K lrc
lsi1012lt1g s-lsi1012lt1g.pdf 
LESHAN RADIO COMPANY, LTD.LSI1012LT1GN-Channel 1.8-V (G-S) MOSFETS-LSI1012LT1GFEATURES3D TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD ProtectedD High-Side Switching1D Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)2D Fast Switching Speed: 10 nsD S- Prefix for Automotive and Other Applications Requiring SOT-23Unique Site and Control Change Requiremen
8.4. Size:248K lrc
lsi1012xt1g.pdf 
LESHAN RADIO COMPANY, LTD.N-Channel 1.8-V (G-S) MOSFETLSI1012XT1GFEATURESD TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD Protected: 2000 VD High-Side SwitchingD Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)D Fast Switching Speed: 10 nsSC-89BENEFITSD Ease in Driving SwitchesD Low Offset (Error) VoltageGate 1D Low-Voltage OperationD High-Speed Circui
8.5. Size:364K cn tech public
si1012cr.pdf 
WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWwww.techpublic.com.tw
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