SI1012X Todos los transistores

 

SI1012X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI1012X
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
   Paquete / Cubierta: SC-89
     - Selección de transistores por parámetros

 

SI1012X Datasheet (PDF)

 ..1. Size:230K  vishay
 si1012r si1012x.pdf pdf_icon

SI1012X

Si1012R, Si1012XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.8 V RatedVDS (V) RDS(on) ()ID (mA) Gate-Source ESD Protected: 2000 V0.70 at VGS = 4.5 V 600 High-Side Switching0.85 at VGS = 2.5 V Low On-Resistance: 0.7 20 500 Low Threshold: 0.8 V (typ.)1.25 at VGS = 1.8 V 350 Fast Switc

 0.1. Size:248K  lrc
 lsi1012xt1g.pdf pdf_icon

SI1012X

LESHAN RADIO COMPANY, LTD.N-Channel 1.8-V (G-S) MOSFETLSI1012XT1GFEATURESD TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD Protected: 2000 VD High-Side SwitchingD Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)D Fast Switching Speed: 10 nsSC-89BENEFITSD Ease in Driving SwitchesD Low Offset (Error) VoltageGate 1D Low-Voltage OperationD High-Speed Circui

 8.1. Size:154K  vishay
 si1012cr.pdf pdf_icon

SI1012X

Si1012CRVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.2 V RatedVDS (V) RDS(on) () ID (mA) Qg (Typ.) 100 % Rg Tested0.396 at VGS = 4.5 V 600 Gate-Source ESD Protected: 1000 V Material categorization:0.456 at VGS = 2.5 V 500For definitions of compliance please see20 0.750.546 at VGS = 1.8 V 350www.vis

 8.2. Size:175K  vishay
 si1012r-x.pdf pdf_icon

SI1012X

Si1012R/XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated Gate-Source ESD Protected: 2000 V0.85 at VGS = 2.5 V 20 500 High-Side Switching1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STP2N80 | AOK160A60FDL | SSM4502GM | FPF1C2P5BF07A | FQD20N06L | 24NM60G-TQ2-T | SGSP341

 

 
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