SI1012X Todos los transistores

 ..1. Size:230K  vishay
 si1012r si1012x.pdf

Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 1.8 V Rated VDS (V) RDS(on) ( )ID (mA) Gate-Source ESD Protected 2000 V 0.70 at VGS = 4.5 V 600 High-Side Switching 0.85 at VGS = 2.5 V Low On-Resistance 0.7 20 500 Low Threshold 0.8 V (typ.) 1.25 at VGS = 1.8 V 350 Fast Switc

 0.1. Size:248K  lrc
 lsi1012xt1g.pdf

LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G FEATURES D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected 2000 V D High-Side Switching D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) D Fast Switching Speed 10 ns SC-89 BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage Gate 1 D Low-Voltage Operation D High-Speed Circui

 8.1. Size:154K  vishay
 si1012cr.pdf

Si1012CR Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 1.2 V Rated VDS (V) RDS(on) ( ) ID (mA) Qg (Typ.) 100 % Rg Tested 0.396 at VGS = 4.5 V 600 Gate-Source ESD Protected 1000 V Material categorization 0.456 at VGS = 2.5 V 500 For definitions of compliance please see 20 0.75 0.546 at VGS = 1.8 V 350 www.vis

 8.2. Size:175K  vishay
 si1012r-x.pdf

Si1012R/X Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET 1.8 V Rated Gate-Source ESD Protected 2000 V 0.85 at VGS = 2.5 V 20 500 High-Side Switching 1.25 at VGS = 1.8 V 350 Low On-Resistance 0.7

 8.3. Size:869K  mcc
 si1012.pdf

SI1012 Features Low Threshold ESD Protected Gate Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to

 8.4. Size:477K  lrc
 lsi1012lt1g s-lsi1012lt1g.pdf

LESHAN RADIO COMPANY, LTD. LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET S-LSI1012LT1G FEATURES 3 D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected D High-Side Switching 1 D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) 2 D Fast Switching Speed 10 ns D S- Prefix for Automotive and Other Applications Requiring SOT-23 Unique Site and Control Change Requiremen

 8.5. Size:364K  cn tech public
 si1012cr.pdf

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