SI1012X MOSFET Datasheet: N-Ch, 20V, 0.5A. Full specification with pinout and replacement list

SI1012X Specs and Replacement

Type Designator: SI1012X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: SC-89

SI1012X substitution

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SI1012X datasheet

..1. Size:230K vishay
si1012r si1012x.pdf pdf_icon

Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 1.8 V Rated VDS (V) RDS(on) ( )ID (mA) Gate-Source ESD Protected 2000 V 0.70 at VGS = 4.5 V 600 High-Side Switching 0.85 at VGS = 2.5 V Low On-Resistance 0.7 20 500 Low Threshold 0.8 V (typ.) 1.25 at VGS = 1.8 V 350 Fast Switc... See More ⇒

0.1. Size:248K lrc
lsi1012xt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G FEATURES D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected 2000 V D High-Side Switching D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) D Fast Switching Speed 10 ns SC-89 BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage Gate 1 D Low-Voltage Operation D High-Speed Circui... See More ⇒

8.1. Size:154K vishay
si1012cr.pdf pdf_icon

Si1012CR Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 1.2 V Rated VDS (V) RDS(on) ( ) ID (mA) Qg (Typ.) 100 % Rg Tested 0.396 at VGS = 4.5 V 600 Gate-Source ESD Protected 1000 V Material categorization 0.456 at VGS = 2.5 V 500 For definitions of compliance please see 20 0.75 0.546 at VGS = 1.8 V 350 www.vis... See More ⇒

8.2. Size:175K vishay
si1012r-x.pdf pdf_icon

Si1012R/X Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET 1.8 V Rated Gate-Source ESD Protected 2000 V 0.85 at VGS = 2.5 V 20 500 High-Side Switching 1.25 at VGS = 1.8 V 350 Low On-Resistance 0.7... See More ⇒